STP110N8F6 MOSFET N-CH 80V 110A TO220

DescriptionSTP110N8F6: MOSFET N-channel 80 V, 0.0056 Ohm typ 110 A, STripFET F6 Power MOSFETMfr. Part#: STP110N8F6Mfr.: STMICRODatasheet: (e-mail or chat us for PDF file)ROHS Status: Quality: 100% OriginalWarranty: ONE YEAR     Technology:Si Mounting Style:Through Hole Package / Case:TO-220-3 Transistor Polarity:N-Channel Number of Channels:1 Channel Vds - Drain-Source Breakdown Voltage:80 V Id - Continuous Drain Current:110 A Rds On - Drain-Source Resistance:6.5 mOhms Vgs - Gate-Source Voltage:- 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage:2.5 V Qg - Gate Charge:150 nC Minimum Operating Temperature:- 55 C Maximum Operating Temperature:+ 175 C Pd - Power Dissipation:200 W Channel Mode:Enhancement Tradename:STripFET Series:STP110N8F6 Packaging:Tube Brand:STMicroelectronics Configuration:Single Fall Time:48 ns Height:15.75 mm Length:10.4 mm Product Type:MOSFET Rise Time:61 ns Factory Pack Quantity:1000 Subcategory:MOSFETs Transistor Type:1 N-Channel Power MOSFET Typical Turn-Off Delay Time:162 ns Typical Turn-On Delay Time:24 ns Width:4.6 mm Unit Weight:0.068784 ozApplications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages    Why choosing usLocated in Shenzhen, the electronic market center of China.100% guarantee components quality: Genuine Original.Sufficient stock on your urgent demand.Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturingFaster shipment: In stock components can ship the same day .24 Hours service  Notice:Product images are for reference only.You can contact sales person to apply for a better price. For more products, Pls do not hesitate to contact our Sales team. /* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1