600V 7.5A N-Channel Enhancement Mode Power Mosfet F8n60 to-220f

DescriptionThese N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.  PARAMETERSYMBOLVALUEUNIT8N60/I8N60/E8N60/B8N60/D8N60F8N60 Maximum Drian-Source DC VoltageVDS600VMaximum Gate-Drain VoltageVGS±30VDrain Current(continuous)ID(T=25ºC)7.5A(T=100ºC)4.8ADrain Current(Pulsed)IDM30ASingle Pulse Avalanche EnergyEAS400mJPeak Diode Recovery dv/dtdv/dt5V/nsTotal DissipationTa=25ºCPtot22WTC=25ºCPtot10035WJunction TemperatureTj150ºCstorage TemperatureTstg-55~150ºC  FeaturesFast SwitchingESD Improved CapabilityLow ON Resistance(Rdson≤1.3Ω)Low Gate Charge(Typ: 24nC)Low Reverse Transfer Capacitances(Typ: 5.5pF)100% Single Pulse Avalanche Energy Test100% ΔVDS Test  Applicationsused in various power switching circuit for system miniaturization and higher efficiency.Power switch circuit of electron ballast and adaptor.  Product Specifications and Packaging ModelsProduct ModelPackage TypeMark NameRoHSPackageQuantity8N60TO-220C8N60Pb-freeTube1000/boxF8N60TO-220FF8N60Pb-freeTube1000/boxB8N60TO-251B8N60Pb-freeTube3000/boxD8N60TO-252D8N60Pb-freeTape & Reel2500/boxI8N60TO-262I8N60Pb-freeTube1000/boxE8N60TO-263E8N60Pb-freeTape & Reel800/box/* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1