Global IGBT Module for New Energy Vehicle (NEV) Aec-Q101 Qualified Moter Driver Osg65r038hzaf To247 Vds 650V R

  General DescriptionThe GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.The GreenMOS® SuperSi series is based on Oriental Semiconductor's unique device design to achieve extremely fast switching characteristics. It is the perfect replacement for the Gallium Nitride (GaN) device in high frequency operations with better ruggedness and cost. It is targeted to meet the most aggressive efficiency standards of power supply systems by pushing both performance and power density to extreme limits.Features                                                                                                   Low RDS(ON) & FOMExtremely low switching lossExcellent stability and uniformityEasy to design inApplicationsPD chargerLarge screen displayTelecom powerServer powerKey Performance Parameters  ParameterValueUnitVDS, min @ Tj(max)700VID, pulse36ARDS(ON), max @ VGS=10V340mΩQg9.6nCMarking Information  Product NamePackageMarkingOSS65R340DFTO252OSS65R340D  Absolute Maximum Ratings at Tj=25°C unless otherwise noted  ParameterSymbolValueUnitDrain-sourcevoltageVDS650VGate-sourcevoltageVGS±30VContinuous drain current1), TC=25 °CID12AContinuous drain current1), TC=100 °C7.6Pulsed drain current2), TC=25 °CID, pulse36AContinuous diode forward current1), TC=25 °CIS12ADiode pulsed current2), TC=25 °CIS, pulse36APower dissipation3), TC=25 °CPD83WSingle pulsed avalanche energy5)EAS200mJMOSFET dv/dt ruggedness, VDS=0…480 Vdv/dt50V/nsReverse diode dv/dt, VDS=0…480 V, ISD≤IDdv/dt15V/nsOperation and storage temperatureTstg, Tj-55 to 150°CThermal Characteristics  ParameterSymbolValueUnitThermalresistance,junction-caseRθJC1.5°C/WThermalresistance,junction-ambient4)RθJA62°C/WElectrical Characteristics at Tj=25°C unless otherwise specifiedParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source breakdown voltageBVDSS650  VVGS=0 V, ID=250 μA700  VGS=0 V, ID=250 μA, Tj=150 °CGate threshold voltageVGS(th)2.9 3.9VVDS=VGS, ID=250 μADrain-source on- state resistanceRDS(ON) 0.300.34ΩVGS=10 V, ID=6 A 0.73 VGS=10 V, ID=6 A, Tj=150 °CGate-source leakage currentIGSS  100nAVGS=30 V  -100VGS=-30 VDrain-source leakage currentIDSS  1μAVDS=650 V, VGS=0 VDynamic CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionInput capacitanceCiss 443.5 pFVGS=0 V, VDS=50 V, ƒ=100 KHzOutput capacitanceCoss 59.6 pFReverse transfer capacitanceCrss 1.7 pFTurn-on delay timetd(on) 22.4 nsVGS=10 V, VDS=400 V, RG=2 Ω, ID=6 ARise timetr 17.5 nsTurn-off delay timetd(off) 40.3 nsFall timetf 7.2 nsGate Charge CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionTotal gate chargeQg 9.6 nCVGS=10 V, VDS=400 V, ID=6 AGate-sourcechargeQgs 2.2 nCGate-drainchargeQgd 4.5 nCGate plateau voltageVplateau 6.5 VBody Diode CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionDiode forward voltageVSD  1.3VIS=12 A, VGS=0 VReverse recovery timetrr 236.5 nsVR=400 V, IS=6 A,di/dt=100 A/μsReverse recovery chargeQrr 2.2 μCPeak reverse recovery currentIrrm 19.1 ANoteCalculated continuous current based on maximum allowable junction temperature.Repetitive rating; pulse width limited by max. junction temperature.Pd is based on max. junction temperature, using junction-case thermal resistance.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 °C.    /* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1