Aux Flyback Converter One Switch Topologies Mosfet

Product DescriptionGeneral DescriptionOSG90R1K2xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.Features                                                                       ApplicationsLow RDS(on) & FOM                                              LightingExtremely low switching loss                               Hard switching PWMExcellent stability and uniformity                         Server power supplyEasy to drive                                                       ChargerKey Performance Parameters  Absolute Maximum Ratings at Tj=25ºC unless otherwise noted  ParameterSymbolValueUnitDrain source voltageVDS900VGate source voltageVGS±30VContinuous drain current1), TC=25 ºCID5AContinuous drain current1), TC=100 ºC3.2Pulsed drain current2), TC=25 ºCID, pulse15APower dissipation3) for TO251, TO262, TC=25 ºCPD83WPower dissipation3)for TO220F, TC=25 ºC31Single pulsed avalanche energy5)EAS211mJMOSFET dv/dt ruggedness, VDS=0…480 Vdv/dt50V/nsReverse diode dv/dt, VDS=0…480 V, ISD≤IDdv/dt15V/nsOperation and storage temperatureTstg,Tj-55 to 150ºC    &bsp; Thermal Characteristics  ParameterSymbolValueUnitTO251/TO262TO220FThermal resistance, junction-caseRθJC1.54.0ºC/WThermal resistance, junction-ambient4)RθJA6262.5ºC/WElectrical Characteristics at Tj=25 ºC unless otherwise specified  ParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source breakdown voltageBVDSS900  VVGS=0 V, ID=250 μA9601070 VGS=0 V, ID=250 μA,Tj=150 ºCGate threshold voltageVGS(th)2.0 4.0VVDS=VGS, ID=250 μADrain-source on-state resistanceRDS(ON) 1.01.2ΩVGS=10 V, ID=2 A 2.88 VGS=10 V, ID=2 A,Tj=150 ºCGate-source leakage currentIGSS  100nAVGS=30 V  -100VGS=-30 VDrain-source leakage currentIDSS  10μAVDS=900 V, VGS=0 VDynamic Characteristics  ParameterSymbolMin.Typ.Max.UnitTest conditionInput capacitanceCiss 874.2 pFVGS=0 V, VDS=50 V,f=100kHzOutput capacitanceCoss 37.5 pFReverse transfer capacitanceCrss 1.7 pFTurn-on delay timetd(on) 33.23 nsVGS=10 V, VDS=400 V, RG=33 Ω, ID=5 ARise timetr 26.50 nsTurn-off delay timetd(off) 44.00 nsFall timetf 17.63 ns    Gate Charge CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionTotal gate chargeQg 12.50 nCID=5 A, VDS=400 V, VGS=10 VGate-source chargeQgs 3.75 nCGate-drain chargeQgd 4.28 nCGate plateau voltageVplateau 5.8 VBody Diode Characteristics  ParameterSymbolMin.Typ.Max.UnitTest conditionDiode forward currentIS  5AVGS