Solar/UPS High Voltage Single N-Channel Power Mosfet

Product DescriptionGeneral DescriptionThe  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The  Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.Features      Low RDS(ON) & FOM      Extremely low switching loss      Excellent stability and uniformityApplications      LED lighting     Telecom Power      Solar/UPS      Sever power      PC power      EV Charger Key Performance Parameters ParameterValueUnitVDS, min @ Tj(max)850VID, pulse45ARDS(ON) , max @ VGS=10V300mΩQg23.3nCMarking Information  Product NamePackageMarkingOSG80R300JFPDFN 8×8OSG80R300JPackage & Pin InformationAbsolute Maximum Ratings at Tj=25°C unless otherwise noted  ParameterSymbolValueUnitDrain-source voltageVDS800VGate-source voltageVGS±30VContinuous drain current1) , TC=25 °CID15AContinuous drain current1) , TC=100 °C9.5Pulsed drain current2) , TC=25 °CID, pulse45AContinuous diode forward current1) , TC=25 °CIS15ADiode pulsed current2) , TC=25 °CIS, pulse45APower dissipation3) , TC=25 °CPD151WSingle pulsed avalanche energy5)EAS360mJMOSFET dv/dt ruggedness, VDS=0…480 Vdv/dt50V/nsReverse diode dv/dt, VDS=0…480 V, ISD≤IDdv/dt15V/nsOperation and storage temperatureTstg, Tj-55 to 150°CThermal Characteristics  ParameterSymbolValueUnitThermal resistance, junction-caseRθJC0.83°C/WThermal resistance, junction-ambient4)RθJA62°C/WElectrical Characteristics at Tj=25°C unless otherwise specified  ParameterSymbolMin.Typ.Max.UnitTest conditionDrain-sourcebreakdown voltageBVDSS800  VVGS=0 V, ID=250 μA850  VGS=0 V, ID=250 μA, Tj=150 °CGate thresholdvoltageVGS(th)2.9 3.9VVDS=VGS , ID=250 μADrain-source on- state resistanceRDS(ON) 0.240.3ΩVGS=10 V, ID=7.5 A 0.64 VGS=10 V, ID=7.5 A, Tj=150 °CGate-sourceleakage currentIGSS  100nAVGS=30 V  - 100VGS=-30 VDrain-sourceleakage currentIDSS  5μAVDS=800 V, VGS=0 VGate resistanceRG 18.2 Ωƒ=1 MHz, Open drainDynamic Characteristics  ParameterSymbolMin.Typ.Max.UnitTest conditionInput capacitanceCiss 1552 pFVGS=0 V,VDS=50 V,ƒ=100 kHzOutput capacitanceCoss 80.1 pFReverse transfer capacitanceCrss 2.1 pFTurn-on delay timetd(on) 33.6 nsVGS=10 V,VDS=400 V,RG=2 Ω,ID=7.5 ARise timetr 20.3 nsTurn-off delay timetd(off) 57.9 nsFall timetf 4.5 nsGate Charge Characteristics  ParameterSymbolMin.Typ.Max.UnitTest conditionTotal gate chargeQg 22.7 nCVGS=10 V,VDS=400 V,ID=7.5 AGate-source chargeQgs 8.6 nCGate-drain chargeQgd 2.3 nCGate plateau voltageVplateau 5.5 VBody Diode Characteristics  ParameterSymbolMin.Typ.Max.UnitTest conditionDiode forward voltageVSD  1.3VIS=15 A,VGS=0 VReverse recovery timetrr 313.7 nsVR =400 V,IS=7.5 A,di/dt=100 A/μsReverse recovery chargeQrr 4.2 μCPeak reverse recovery currentIrrm 25.2 ANote1)    Calculated continuous current based on maximum allowable junction temperature. 2)    Repetitive rating; pulse width limited by max. junction temperature.3)    Pd is based on max. junction temperature, using junction-case thermal resistance.4)    The value of RθJA  is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.5)    VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °Supply ChainGreen Product Declaration     /* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1