110A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06e

PARAMETERSYMBOLVALUEUNITDH066N06/DH066N06D Drian-to-Source VoltageVDSS60VGate-to-Source VoltageVGSS±20VDrain Current(continuous)ID(T=25ºC)110A(T=100ºC)78ADrain Current(Pulsed)IDM440ASingle Pulse Avalanche EnergyEAS484mJTotal DissipationTa=25ºCPtot2 WTC=25ºCPtot150 WJunction TemperatureTj-55~175ºCstorage TemperatureTstg-55~175ºC  FeaturesFast SwitchingLow ON ResistanceLow Gate ChargeLow Reverse Transfer Capacitances100% Single Pulse Avalanche Energy Test100% ΔVDS TestApplicationsPower switching applicationsInverter management systemElectric toolsAutomotive electronics  Product Specifications and Packaging ModelsProduct ModelPackage TypeMark NameRoHSPackageQuantityDH066N06TO-220CDH066N06Pb-freeTube1000/boxDH066N06FTO-220FDH066N06FPb-freeTube1000/boxDH066N06BTO-251DH066N06BPb-freeTube3000/boxDH066N06DTO-252DH066N06DPb-freeTape & Reel2500/boxDH066N06ITO-262DH066N06IPb-freeTube1000/boxDH066N06ETO-263DH066N06EPb-freeTape & Reel800/box  /* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1